Next generation 28nm process provides first comprehensive manufacturing platform featuring both high-k metal gate and silicon oxynitride

HSINCHU, Taiwan, R.O.C., Sept. 29 /PRNewswire-FirstCall/ -- TSMC, Ltd. (TSE: 2330) (NYSE: TSM) today announced it plans to deliver its 28nm process as a full node technology offering the option of both high-k metal gate (HKMG) and silicon oxynitride (SiON) material to support different customer applications and performance requirements. Initial production is expected in the first quarter of 2010.

The 28nm node will be a full node in TSMC's manufacturing-flexible 28nm family, so named because it is the only family of processes at these geometries to offer either a HKMG or SiON transistor option. Multiple customers are working with TSMC to develop 28nm product designs. These collaborations have matched the most appropriate transistor material with the desired speed, power, and cost requirements.

'Product differentiation, faster time-to-market and investment optimization are the three most important values TSMC delivers to our customers. In support of these values, we are developing this comprehensive 28nm technology family so that it offers choices, depending on the customer applications and performance requirements,' said Jason Chen, vice president, Worldwide Sales and Marketing, TSMC.

The SiON-based 28LPT (low power / high performance) process, the family's lowest total power and cost-effective technology, is expected to provide twice the gate density, up to 50% more speed or 30-50% lower power consumption than TSMCs' 40LP technology. The 28LPT process is expected to go into initial production in the beginning of 2010 and support applications like cellular baseband, application processors, wireless connectivity, and portable consumer.

TSMC's decision to build on proven SiON technology for the 28LPT process is driven by changing wireless and portable consumer application dynamics under unrelenting pressure for products to hit market windows. Consumers a few years ago, wanted low-leakage handsets that supported long battery life. Today's consumers increasingly rely on their wireless devices for Internet browsing, video streaming, music, mobile TV, GPS navigation, along with traditional phone and texting services. Active usage power consumption is now a much larger factor in battery life. SiON gate technology, because of its smaller gate capacitance and therefore lower active power than HKMG, provides a solution with lower total power, cost, and risk for power-limited applications.

'Our customers are really looking for a high performance, low active power, and cost-effective technology to meet their market requirements for their portable consumer products,' said Dr.